DESCRIPTION
NE-RE08 is a dry plasma stripping equipment, suitable for 2/4/6/8 inch wafer photoresist removal and ashing process. The equipment adopts high-density RIE plasma etching system, with fast stripping rate, good uniformity, high selectivity, good anisotropy and other performance advantages.
Product features: 1. The equipment adopts RIE reactive ion etching mode, with fast degumming rate. 2. Full-area process gas inlet spray head, radial (axisymmetric) exhaust structure, to ensure the improvement of process uniformity and rate. 3. Water-cooled electrode cooling system to achieve substrate temperature control. 4. Direct-open design for easy and fast loading and unloading.
Main uses: 1. Used for positive and negative photoresist stripping of 8-inch and below wafers (SOI, SI, glass, copper and other semiconductor materials). 2. Polyimide photoresist (PI) stripping. 3. Organic matter removal. 4. PR Descum primer process after photolithography process. 5. Plasma activation of substrate surface (02\Ar)
PARAMETER
Model | NE-RE08 |
Generator | 13.56MHz/600W |
Workbench size | 8 inches (diameter 203 mm) |
Applicable wafer size | 8 inches and below (single chip) |
Etch mode | RIE |
Uniformity | ± 5% |
Reaction gas | The standard configuration is 2 channels, and the maximum configuration is 4 channels. O2, Ar, N2, CF4, Cl2 and other gases |
Electrode cooling method | water cooling |
gas flow control | 0-500sccm |
Diemnsions | W670×D700×H1400(mm) |
Power supply | AC220V,50/60Hz |
PRODUCT FEATURES
Fast Deposition Rate
Good Film Quality
Process Stability
High Productivity
Fully Automatic
Simple Operation
Plasma
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