NE-RIE01 is a reactive ion etcher, mainly used for dry etching process of semiconductor device microfabrication technology. The equipment is equipped with a shower head airflow distribution system and a water-cooled electrode sample stage, a high vacuum etching chamber, a heated chamber, and a chamber limit vacuum of 0.0035pa or lower. The whole machine is rigorously designed, the structure is centralized, the operation is simple and intuitive, and the process repeatability is good. The equipment adopts RIE plasma etching mode, which has the advantages of fast etching rate, good uniformity, high selectivity, and good anisotropy.

Reactive ion etching (RIE) includes two etching processes: physical etching and chemical etching. During etching, the gas in the reaction chamber glow discharges to generate plasma containing active substances such as ions, electrons and free radicals, which can diffuse and adsorb to the surface of the etched sample and react chemically with the atoms on the surface to form volatile substances, thereby achieving the purpose of etching the surface of the sample. At the same time, high-energy ions are fired at the sample surface under a certain working pressure to physically bombard and etch, removing the redeposited reaction products or polymers. The volatile substances produced by the chemical reaction and the by-products of the physical bombardment are both pumped away through the vacuum system.

Equipment use: 1. Etching various materials, such as Si, SiO2, SiN, Poly-Si, GaAs, Mo, Pt, polyimide, etc.; 2. Photoresist ashing, hydrophilic and hydrophobic modification, surface energy enhancement, functional group introduction, biocompatibility improvement, etc.;